? semiconductor components industries, llc, 2005 october, 2005 ? rev. 1 1 publication order number: ncr169d/d ncr169d general purpose sensitive gate silicon controlled rectifier reverse blocking thyristor pnpn device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. supplied in a cost effective plastic to-226aa package. features ? sensitive gate allows direct triggering by microcontrollers and other logic circuits ? on?state current rating of 0.8 amperes rms at 80 c ? surge current capability ? 10 amperes ? immunity to dv/dt ? 20 v/ sec minimum at 110 c ? glass-passivated surface for reliability and uniformity ? device marking: ncr169d, date code ? pb?free packages are available maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off?state voltage (note 1.) (t j = 40 to 110 c, sine wave, 50 to 60 hz; gate open) v drm, v rrm 400 volts on-state rms current (t c = 80 c) 180 conduction angles i t(rms) 0.8 amp peak non-repetitive surge current (1/2 cycle, sine wave, 60 hz, t j = 25 c) i tsm 10 amps circuit fusing consideration (t = 10 ms) i 2 t 0.415 a 2 s forward peak gate power (t a = 25 c, pulse width 1.0 s) p gm 0.1 watt forward average gate power (t a = 25 c, t = 20 ms) p g(av) 0.10 watt forward peak gate current (t a = 25 c, pulse width 1.0 s) i gm 1.0 amp reverse peak gate voltage (t a = 25 c, pulse width 1.0 s) v grm 5.0 volts operating junction temperature range @ rate v rrm and v drm t j ?40 to 110 c storage temperature range t stg ?40 to 150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. scr 0.8 amperes rms 400 volts to?92 (to?226aa) case 029 style 10 a g k pin assignment 1 2 3 gate anode cathode k g a see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information marking diagram a = assembly location l = wafer lot y = year ww = work week = pb?free package (note: microdot may be in either location) ncr 169d alyww 123 http://onsemi.com
ncr169d http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance ? junction to case ? junction to ambient r jc r ja 75 200 c/w lead solder temperature ( 1/16 from case, 10 secs max) t l 260 c electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (note 1.) t c = 25 c (v d = rated v drm and v rrm ; r gk = 1.0 k )t c = 110 c i drm , i rrm ? ? ? ? 10 0.1 a ma on characteristics peak forward on?state voltage (*) (i tm = 1.0 amp peak @ t a = 25 c) v tm ? ? 1.7 volts gate tri gger current (continuous dc) (note 2.) t c = 25 c (v ak = 12 v, r l = 100 ohms) i gt ? 40 200 a holding current (note 2.) t c = 25 c (v ak = 12 v, i gt = 0.5 ma) t c = ?40 c i h ? ? 0.5 ? 5.0 10 ma latch current t c = 25 c (v ak = 12 v, i gt = 0.5 ma, r gk = 1.0 k) t c = ?40 c i l ? ? 0.6 ? 10 15 ma gate tri gger v oltage (continuous dc) (note 2.) t c = 25 c (v ak = 12 v, r l = 100 ohms, i gt = 10 ma) t c = ?40 c v gt ? ? 0.62 ? 0.8 1.2 volts dynamic characteristics critical rate of rise of off?state voltage (v d = rated v drm , exponential waveform, r gk = 1000 ohms, t j = 110 c) dv/dt 20 35 ? v/ s critical rate of rise of on?state current (i pk = 20 a; pw = 10 sec; dig/dt = 1.0 a/ sec, igt = 20 ma) di/dt ? ? 50 a/ s *indicates pulse test: pulse width 1.0 ms, duty cycle 1%. 1. r gk = 1000 ohms included in measurement. 2. does not include r gk in measurement.
ncr169d http://onsemi.com 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode ? forward blocking region i rrm at v rrm (off state) figure 1. typical gate trigger current versus junction temperature t j , junction temperature ( c) 100 90 80 70 60 50 40 30 110 50 35 20 5 ?10 ?25 ?40 gate trigger current ( a) figure 2. typical gate trigger voltage versus junction temperature t j , junction temperature ( c) 110 65 50 35 20 5 ?10 ?25 ?40 0.8 0.7 0.6 0.5 0.4 0.3 gate trigger voltage (volts) 0.2 20 10 0.9 1.0 95 80 65 95 80
ncr169d http://onsemi.com 4 dc figure 3. typical holding current versus junction temperature t j , junction temperature ( c) 1000 100 110 65 50 35 20 5 ?10 ?25 ?40 holding current ( a) figure 4. typical latching current versus junction temperature 10 figure 5. typical rms current derating i t(rms) , rms on-state current (amps) 120 110 100 90 80 70 60 50 0.5 0.4 0.3 0.2 0.1 0 t c , maximum allowable case temperature ( c) figure 6. typical on?state characteristics v t , instantaneous on-state voltage (volts) 3.5 3.2 2.3 2.0 1.7 1.4 1.1 0.8 0.5 1 i t , instantaneous on?state current (amps) 0.1 40 10 95 80 t j , junction temperature ( c) 1000 100 110 65 50 35 20 5 ?10 ?25 ?40 latching current ( a) 10 95 80 30 60 90 120 180 2.9 2.6 maximum @ t j = 110 c maximum @ t j = 25 c
ncr169d http://onsemi.com 5 to?92 eia radial tape in fan fold box or on reel h2a h2a h f1 f2 p2 p2 p1 p d w w1 l1 w2 h2b h2b t1 t t2 h4 h5 h1 l figure 7. device positioning on tape symbol item specification inches millimeter min max min max d tape feedhole diameter 0.1496 0.1653 3.8 4.2 d2 component lead thickness dimension 0.015 0.020 0.38 0.51 f1, f2 component lead pitch 0.0945 0.110 2.4 2.8 h bottom of component to seating plane .059 .156 1.5 4.0 h1 feedhole location 0.3346 0.3741 8.5 9.5 h2a deflection left or right 0 0.039 0 1.0 h2b deflection front or rear 0 0.051 0 1.0 h4 feedhole to bottom of component 0.7086 0.768 18 19.5 h5 feedhole to seating plane 0.610 0.649 15.5 16.5 l defective unit clipped dimension 0.3346 0.433 8.5 11 l1 lead wire enclosure 0.09842 ? 2.5 ? p feedhole pitch 0.4921 0.5079 12.5 12.9 p1 feedhole center to center lead 0.2342 0.2658 5.95 6.75 p2 first lead spacing dimension 0.1397 0.1556 3.55 3.95 t adhesive tape thickness 0.06 0.08 0.15 0.20 t1 overall taped package thickness ? 0.0567 ? 1.44 t2 carrier strip thickness 0.014 0.027 0.35 0.65 w carrier strip width 0.6889 0.7481 17.5 19 w1 adhesive tape width 0.2165 0.2841 5.5 6.3 w2 adhesive tape position .0059 0.01968 .15 0.5 notes: 1. maximum alignment deviation between leads not to be greater than 0.2 mm. 2. defective components shall be clipped from the carrier tape such that the remaining protrusion (l) does not exceed a maximum of 11 mm. 3. component lead to tape adhesion must meet the pull test requirements. 4. maximum non?cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. no more than 1 consecutive missing component is permitted. 7. a tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. splices will not interfere with the sprocket feed holes.
ncr169d http://onsemi.com 6 ordering & shipping information: mcr100 series packaging options, device suffix device description of to92 tape orientation shipping ncr169d n/a, bulk bulk in box (5k/box) ncr169dg n/a, bulk bulk in box (5k/box) (pb?free) ncr169drlra round side of to92 and adhesive tape visible radial tape and reel (2k/reel) NCR169DRLRAG round side of to92 and adhesive tape visible radial tape and reel (2k/reel) (pb?free) ncr169drlrm flat side of to92 and adhesive tape visible radial tape and fan fold box (2k/box) ncr169drlrmg flat side of to92 and adhesive tape visible radial tape and fan fold box (2k/box) (pb?free) ncr169drlrp flat side of to92 and adhesive tape visible radial tape and fan fold box (2k/box) ncr169drlrpg flat side of to92 and adhesive tape visible radial tape and fan fold box (2k/box) (pb?free) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ncr169d http://onsemi.com 7 package dimensions style 10: pin 1. cathode 2. gate 3. anode to?92 (to?226aa) case 029?11 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 ??? 12.70 ??? l 0.250 ??? 6.35 ??? n 0.080 0.105 2.04 2.66 p ??? 0.100 ??? 2.54 r 0.115 ??? 2.93 ??? v 0.135 ??? 3.43 ??? 1
ncr169d http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 ncr169d/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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